Small-signal modeling of GaN HEMT switch with a new intrinsic elements extraction method
Geng Miao1, 2, Li Pei-Xian1, Luo Wei-Jun2, Sun Peng-Peng2, Zhang Rong1, 2, Ma Xiao-Hua1, †,
       

GaN based HEMT switch with gate size of 4 × 100 μm.