Small-signal modeling of GaN HEMT switch with a new intrinsic elements extraction method
Geng Miao1, 2, Li Pei-Xian1, Luo Wei-Jun2, Sun Peng-Peng2, Zhang Rong1, 2, Ma Xiao-Hua1, †, 
Simulated and modeled insertion loss and isolation of the x-band switch.
