Small-signal modeling of GaN HEMT switch with a new intrinsic elements extraction method
Geng Miao1, 2, Li Pei-Xian1, Luo Wei-Jun2, Sun Peng-Peng2, Zhang Rong1, 2, Ma Xiao-Hua1, †,
       

Comparisons of S-parameters between measurement (—) and simulation (°) in a frequency range of 5–40 GHz for a device with gate size of 4 × 100 μm: (a) S21, (b) S22.