Weak antilocalization and interaction-induced localization of Dirac and Weyl Fermions in topological insulators and semimetals
Lu Hai-Zhou1, Shen Shun-Qing2
       

(a) Schematic illustration of a Hall bar sample with antidot array. (b) Scanning electron microscopy image of a Bi2Te3 thin film with antidot array, where the edge-to-edge distance between antidots d = 40 nm. The inset is the atomic force microscope image indicating that the antidots depth is about 25 nm. Adapted from Ref. [59].