Current spreading in GaN-based light-emitting diodes
Li Qiang1, 2, Li Yufeng1, 2, Zhang Minyan2, Ding Wen1, 2, Yun Feng1, 2, †,
       

The relationship between (a) IQE and the doping concentration, and (b) IQE and the thickness t, based on simulation by APSYS.