Current spreading in GaN-based light-emitting diodes

Li Qiang^{1, 2}, Li Yufeng^{1, 2}, Zhang Minyan², Ding Wen^{1, 2}, Yun Feng^{1, 2, †,}

Relationship between IQE and current density in the case of changing various parameters. (a) Auger recombination is not considered. (b) Auger recombination is considered. Region I: 10³–10⁴; region II: 10⁴–10⁵; region III: 10⁵–10⁶.