Current spreading in GaN-based light-emitting diodes

Li Qiang^{1, 2}, Li Yufeng^{1, 2}, Zhang Minyan², Ding Wen^{1, 2}, Yun Feng^{1, 2, †,}

Two-dimensional distribution of current density. (a) Only double the thickness of the ITO layer (ρ_ito = 3.5 × 10⁻⁶ Ω·m, t_ito = 400 nm). (b) Only double the resistivity of the ITO layer (ρ_ito = 7.0 × 10₋₆ Ω·m, t_ito = 200 nm). (c) Double both the thickness and resistivity of the ITO layer (ρ_ito = 7.0 × 10⁻⁶ Ω·m, t_ito = 400 nm). (d) Only double the thickness of the n-GaN layer (ρ = 9.09 × 10⁻⁴ Ω·m, t = 5 μm). (e) Only double the resistivity of the n-GaN layer (ρ =18.18 × 10⁻⁴ Ω·m, t = 2.5 μm). (f) Double both the thickness and resistivity of the n-GaN layer (ρ = 18.18 × 10⁻⁴ Ω·m, t = 5 μm).