Current spreading in GaN-based light-emitting diodes

Li Qiang^{1, 2}, Li Yufeng^{1, 2}, Zhang Minyan², Ding Wen^{1, 2}, Yun Feng^{1, 2, †,}

(a) Schematic cross-sectional view of mesa-structure B; (b) schematic diagram of current spreading in ITO layer; (c) equivalent circuit consisting of ITO layer resistance, n-GaN layer resistance, and ideal diodes represents the p–n junction.