Molecular dynamics simulation of structural change at metal/semiconductor interface induced by nanoindenter

Zhao Bing-Bing^{1, 2}, Wang Ying^{1, 2}, Liu Chang^{1, 2}, Wang Xiao-Chun^{1, 2, †,}

MD simulation results showing cross-sectional views of xy plane with the same nanoindentation depth (20 Å) and different incident angles: (a) −80°, (b) −70°, (c) −60°, (d) −45°, (e) −30°, (f) 0°, (g) 30°, (h) 45°, (i) 60°, (j) 70°, and (k) 80°. The extended length L of the extended atom layer is illustrated in panel (a). (l) The lengths of the extended atom layer for different incident angles (blue and red points for the lengths of the Si and Cu extended atom layers, respectively).