Semi-analytical model for quasi-double-layer surface electrode ion traps
Zhang Jian1, Chen Shuming1, 2, †, , Wang Yaohua1, ‡,
       

The trap depth of the QSE trap versus U and characteristic size a. U varies from 20 V to 180 V, and for each U, a is set to 50 μm, 100 μm or 150 μm.