Comparision between Ga- and N-polarity InGaN solar cells with gradient-In-composition intrinsic layers

Lu Lin^{1, 2, †,}, Li Ming-Chao^{1, 2}, Lv Chen², Gao Wen-Gen^{1, 2}, Jiang Ming^{1, 2}, Xu Fu-Jun³, Chen Qi-Gong^{1, 2}

Dependences of the conversion efficiency on In composition x of (a) Ga-polarity and (b) N-polarity InGaN SC’s.