Comparision between Ga- and N-polarity InGaN solar cells with gradient-In-composition intrinsic layers
Lu Lin
1, 2, †,
, Li Ming-Chao
1, 2
, Lv Chen
2
, Gao Wen-Gen
1, 2
, Jiang Ming
1, 2
, Xu Fu-Jun
3
, Chen Qi-Gong
1, 2
Band diagrams at zero bias in the depletion region for (a) Ga-polarity; (b) N-polarity InGaN SC’s.