Comparision between Ga- and N-polarity InGaN solar cells with gradient-In-composition intrinsic layers

Lu Lin^{1, 2, †,}, Li Ming-Chao^{1, 2}, Lv Chen², Gao Wen-Gen^{1, 2}, Jiang Ming^{1, 2}, Xu Fu-Jun³, Chen Qi-Gong^{1, 2}

Schematics of p–i–n SC structures on c-plane sapphire substrate.