Photoresponse and trap characteristics of transparent AZO-gated AlGaN/GaN HEMT

Wang Chong^{1, 2, †,}, Zhao Meng-Di^{1, 2}, He Yun-Long^{1, 2}, Zheng Xue-Feng^{1, 2}, Zhang Kun^{1, 2}, Wei Xiao-Xiao^{1, 2}, Mao Wei^{1, 2}, Ma Xiao-Hua^{1, 2}, Zhang Jin-Cheng^{1, 2}, Hao Yue^{1, 2}

Trap state time constant as a function of gate voltage, with the inset showing trap state density as a function of their energy.