Photoresponse and trap characteristics of transparent AZO-gated AlGaN/GaN HEMT
Wang Chong1, 2, †, , Zhao Meng-Di1, 2, He Yun-Long1, 2, Zheng Xue-Feng1, 2, Zhang Kun1, 2, Wei Xiao-Xiao1, 2, Mao Wei1, 2, Ma Xiao-Hua1, 2, Zhang Jin-Cheng1, 2, Hao Yue1, 2
       

IDSVDS characteristics of the Ni/Au-gated HEMTs with electric stress under different illumination conditions.