A two-dimensional analytical modeling for channel potential and threshold voltage of short channel triple material symmetrical gate Stack (TMGS) DG-MOSFET

Tripathi Shweta^†,

Schematic diagram of TMGS DG MOSFET, where L (L = L₁ + L₂ + L₃), t_si, t_ox, and t_k are gate length, thickness of silicon channel, thickness of gate oxide, and thickness of high dielectric constant material, respectively.