Characteristics of cylindrical surrounding-gate GaAsxSb1−x/InyGa1−yAs heterojunction tunneling field-effect transistors
Guan Yun-He, Li Zun-Chao†, , Luo Dong-Xu, Meng Qing-Zhi, Zhang Ye-Fei
       

Plots of SS versus drain current for different values of silicon-doped concentration ND at VDS = 0.5 V and NA = 1020 cm−3.