Characteristics of cylindrical surrounding-gate GaAs<italic>x</italic>Sb1−<italic>x</italic>/In<italic>y</italic>Ga1−<italic>y</italic>As heterojunction tunneling field-effect transistors

Characteristics of cylindrical surrounding-gate GaAs_xSb_1−x/In_yGa_1−yAs heterojunction tunneling field-effect transistors

Guan Yun-He, Li Zun-Chao^†,, Luo Dong-Xu, Meng Qing-Zhi, Zhang Ye-Fei

Plots of drain current versus gate voltage for different values of carbon-doped concentration N_A at V_DS = 0.5 V and N_D = 5 × 10¹⁸ cm⁻³.