Characteristics of cylindrical surrounding-gate GaAs<italic>x</italic>Sb1−<italic>x</italic>/In<italic>y</italic>Ga1−<italic>y</italic>As heterojunction tunneling field-effect transistors

Characteristics of cylindrical surrounding-gate GaAs_xSb_1−x/In_yGa_1−yAs heterojunction tunneling field-effect transistors

Guan Yun-He, Li Zun-Chao^†,, Luo Dong-Xu, Meng Qing-Zhi, Zhang Ye-Fei

Energy band diagrams of (a) the conventional TFET and (b) the R-TFET with L_g = 10 nm at V_GS = 0 V.