Characteristics of cylindrical surrounding-gate GaAs<italic>x</italic>Sb1−<italic>x</italic>/In<italic>y</italic>Ga1−<italic>y</italic>As heterojunction tunneling field-effect transistors

Characteristics of cylindrical surrounding-gate GaAs_xSb_1−x/In_yGa_1−yAs heterojunction tunneling field-effect transistors

Guan Yun-He, Li Zun-Chao^†,, Luo Dong-Xu, Meng Qing-Zhi, Zhang Ye-Fei

Curves of drain current versus gate voltage for different material compositions (x = 0.5, y = 0.53, Eb_eff = 0.5 eV and x = 0.4, y = 0.65, Eb_eff = 0.31 eV) in (dashed) linear and (solid) log scales at V_DS = 0.5 V, N_A = 10²⁰ cm⁻³, and N_D = 10¹⁸ cm⁻³.