Physical modeling of direct current and radio frequency characteristics for InP-based InAlAs/InGaAs HEMTs

Sun Shu-Xiang¹, Ji Hui-Fang¹, Yao Hui-Juan¹, Li Sheng¹, Jin Zhi², Ding Peng², Zhong Ying-Hui^{1, †,}

I–V characteristics of the simulated (red) and measured (blue) InP-based HEMT.