Physical modeling of direct current and radio frequency characteristics for InP-based InAlAs/InGaAs HEMTs
Sun Shu-Xiang
1
, Ji Hui-Fang
1
, Yao Hui-Juan
1
, Li Sheng
1
, Jin Zhi
2
, Ding Peng
2
, Zhong Ying-Hui
1, †,
Semi-device structure with mesh refinement.