Physical modeling of direct current and radio frequency characteristics for InP-based InAlAs/InGaAs HEMTs
Sun Shu-Xiang1, Ji Hui-Fang1, Yao Hui-Juan1, Li Sheng1, Jin Zhi2, Ding Peng2, Zhong Ying-Hui1, †,
       

Semi-device structure with mesh refinement.