Electric-field-dependent charge delocalization from dopant atoms in silicon junctionless nanowire transistor

Wang Hao¹, Han Wei-Hua^{1, †,}, Zhao Xiao-Song¹, Zhang Wang¹, Lyu Qi-Feng¹, Ma Liu-Hong^{1, 2}, Yang Fu-Hua^{1, 2, ‡,}

Plots of activation energies (a) E_a2 and (b) E_a3 versus gate voltage for different source–drain bias voltages.