Electric-field-dependent charge delocalization from dopant atoms in silicon junctionless nanowire transistor

Wang Hao¹, Han Wei-Hua^{1, †,}, Zhao Xiao-Song¹, Zhang Wang¹, Lyu Qi-Feng¹, Ma Liu-Hong^{1, 2}, Yang Fu-Hua^{1, 2, ‡,}

Derivative of the transconductance (dg_m/dV_g) as a function of gate voltage at V_ds = 5 mV and T = 150 K. The inset shows the flatband voltages at different drain voltages and temperatures.