Electric-field-dependent charge delocalization from dopant atoms in silicon junctionless nanowire transistor

Wang Hao¹, Han Wei-Hua^{1, †,}, Zhao Xiao-Song¹, Zhang Wang¹, Lyu Qi-Feng¹, Ma Liu-Hong^{1, 2}, Yang Fu-Hua^{1, 2, ‡,}

(a) Arrhenius plots of the conductance at V_ds = 5 mV for various gate voltages. (b) Plots of the activation energy versus gate voltages in different temperature regions.