Atomic-layer-deposited Al2O3 and HfO2 on InAlAs: A comparative study of interfacial and electrical characteristics

Atomic-layer-deposited Al₂O₃ and HfO₂ on InAlAs: A comparative study of interfacial and electrical characteristics

Wu Li-Fan^{1, 2}, Zhang Yu-Ming¹, Lv Hong-Liang^{1, †,}, Zhang Yi-Men¹

O1s photoelectron spectra at the take-off angle θ = 90° for sample (I) Al₂O₃/InAlAs capacitor, and sample (II) HfO₂/InAlAs capacitor.