Atomic-layer-deposited Al2O3 and HfO2 on InAlAs: A comparative study of interfacial and electrical characteristics

Atomic-layer-deposited Al₂O₃ and HfO₂ on InAlAs: A comparative study of interfacial and electrical characteristics

Wu Li-Fan^{1, 2}, Zhang Yu-Ming¹, Lv Hong-Liang^{1, †,}, Zhang Yi-Men¹

XPS spectra of (a) Al 2p in sample I and (b) Hf 4f in sample II at different take-off angle θ (10°, 30°, and 90°).