Atomic-layer-deposited Al2O3 and HfO2 on InAlAs: A comparative study of interfacial and electrical characteristics
Wu Li-Fan1, 2, Zhang Yu-Ming1, Lv Hong-Liang1, †, , Zhang Yi-Men1
       

Curves of Dit versus EtEi for sample I: Al2O3/InAlAs and sample II: HfO2/InAlAs.