Atomic-layer-deposited Al2O3 and HfO2 on InAlAs: A comparative study of interfacial and electrical characteristics

Atomic-layer-deposited Al₂O₃ and HfO₂ on InAlAs: A comparative study of interfacial and electrical characteristics

Wu Li-Fan^{1, 2}, Zhang Yu-Ming¹, Lv Hong-Liang^{1, †,}, Zhang Yi-Men¹

C–V characteristics of samples (I) Al₂O₃/n-InAlAs and (II) HfO₂/n-InAlAs, measured at a frequency of 1 MHz.