Proper In deposition amount for on-demand epitaxy of InAs/GaAs single quantum dots

Shang Xiang-Jun^{1, 2}, Xu Jian-Xing^{1, 2}, Ma Ben^{1, 2}, Chen Ze-Sheng^{1, 2}, Wei Si-Hang^{1, 2}, Li Mi-Feng^{1, 2}, Zha Guo-Wei^{1, 2}, Zhang Li-Chun^{1, 2}, Yu Ying^{1, 2}, Ni Hai-Qiao^{1, 2}, Niu Zhi-Chuan^{1, 2, †,}

Evolutions of QD density and height with θ/θ_c. Left: SI wafers; middle: N⁺ ones. Points and left coordinates in black: maximal QD height; points and right coordinates in blue: QD density. Circle points: Assumed QD height of samples with no AFM; red: SQDs; black: dense QDs. Grey regions: proper θ/θ_c. Right: 1 μm × 1 μm AFM images, QD height statistics and μPL spectra of S1-c1, S17-c, and S18-2. For more details, see Support information.