Proper In deposition amount for on-demand epitaxy of InAs/GaAs single quantum dots

Shang Xiang-Jun^{1, 2}, Xu Jian-Xing^{1, 2}, Ma Ben^{1, 2}, Chen Ze-Sheng^{1, 2}, Wei Si-Hang^{1, 2}, Li Mi-Feng^{1, 2}, Zha Guo-Wei^{1, 2}, Zhang Li-Chun^{1, 2}, Yu Ying^{1, 2}, Ni Hai-Qiao^{1, 2}, Niu Zhi-Chuan^{1, 2, †,}

SQD on-chip distribution of S6 (θ/θ_c = 0.971, top left), S9 (θ/θ_c = 0.967, top right), and S11 (θ/θ_c = 0.964, bottom right) on SI wafers, described by μPL spectra, 1 μm × 1 μm AFM images and QD height statistics. Red circle: SQD region. Bottom left: dense QD on-chip distribution of S2 (θ/θ_c = 0.996). QD density: in unit of μm⁻².