Effects of multiple interruptions with trimethylindium-treatment in the InGaN/GaN quantum well on green light emitting diodes
Qiao Liang1, 2, Ma Zi-Guang2, Chen Hong2, †, 
, Wu Hai-Yan2, Chen Xue-Fang1, 2, Yang Hao-Jun2, Zhao Bin2, He Miao1, 3, ‡, , Zheng Shu-Wen1, Li Shu-Ti1
, Wu Hai-Yan2, Chen Xue-Fang1, 2, Yang Hao-Jun2, Zhao Bin2, He Miao1, 3, ‡, , Zheng Shu-Wen1, Li Shu-Ti1 (a) PL spectra of LEDs A and B at 300 K. The FWHM values of LEDs A and B are 22 nm and 27 nm respectively. (b) EL spectra of LEDs A and B at 20 mA. The integrated EL intensity of LED A is about 1.4 times higher than that of LED B.
