Effects of multiple interruptions with trimethylindium-treatment in the InGaN/GaN quantum well on green light emitting diodes
Qiao Liang1, 2, Ma Zi-Guang2, Chen Hong2, †, 
, Wu Hai-Yan2, Chen Xue-Fang1, 2, Yang Hao-Jun2, Zhao Bin2, He Miao1, 3, ‡, , Zheng Shu-Wen1, Li Shu-Ti1
, Wu Hai-Yan2, Chen Xue-Fang1, 2, Yang Hao-Jun2, Zhao Bin2, He Miao1, 3, ‡, , Zheng Shu-Wen1, Li Shu-Ti1 (a) HRXRD curves for the (0002) reflection of the InGaN/GaN MQWs for LEDs A and B. The HRXRD periodicities of two LEDs were similar; (b) GIXR curves of the MQWs A and B. The surface roughness values of two samples are different.
