Effects of multiple interruptions with trimethylindium-treatment in the InGaN/GaN quantum well on green light emitting diodes
Qiao Liang1, 2, Ma Zi-Guang2, Chen Hong2, †, 
, Wu Hai-Yan2, Chen Xue-Fang1, 2, Yang Hao-Jun2, Zhao Bin2, He Miao1, 3, ‡, , Zheng Shu-Wen1, Li Shu-Ti1
, Wu Hai-Yan2, Chen Xue-Fang1, 2, Yang Hao-Jun2, Zhao Bin2, He Miao1, 3, ‡, , Zheng Shu-Wen1, Li Shu-Ti1 Process of growing an InGaN/GaN period in LED A. Regions signed by I and II indicate the different growth conditions. I, TMIn collaborated with Triethylgallium (TEGa), II, growth interruption, TEGa was idle.
