Large linear magnetoresistance in a new Dirac material BaMnBi<sub>2</sub>

Large linear magnetoresistance in a new Dirac material BaMnBi₂

Wang Yi-Yan^{1, 2, †,}, Yu Qiao-He^{1, 2, †,}, Xia Tian-Long^{1, 2, ‡,}

(a) Temperature dependence of in-plane resistivity ρ_xx(T) and out-plane resistivity ρ_z(T). (b) Hall resistivity ρ_xy versus magnetic field H with the temperature T from 5 K to 150 K. (c) and (d) Temperature dependence of carrier concentration and mobility, respectively. (e) Magnetization versus temperature with the magnetic field H = 1 T applied parallel to ab plane (up) and c axis (down) under zero field cooling (ZFC) (red) and field cooling (FC) (violet) conditions. The dashed lines denote two anomalous temperatures.