Resistive switching characteristic and uniformity of low-power HfO<sub><italic>x</italic></sub>-based resistive random access memory with the BN insertion layer

Resistive switching characteristic and uniformity of low-power HfO_x-based resistive random access memory with the BN insertion layer

Su Shuai, Jian Xiao-Chuan, Wang Fang^†,, Han Ye-Mei, Tian Yu-Xian, Wang Xiao-Yang, Zhang Hong-Zhi, Zhang Kai-Liang^‡,

(a) Plots of ln(I) versus ln(V) in LRS and HRS of the HfO_x device; (b) a plot of ln(I) versus ln(V) in LRS and HRS of HfO_x/BN device.