Resistive switching characteristic and uniformity of low-power HfO<sub><italic>x</italic></sub>-based resistive random access memory with the BN insertion layer

Resistive switching characteristic and uniformity of low-power HfO_x-based resistive random access memory with the BN insertion layer

Su Shuai, Jian Xiao-Chuan, Wang Fang^†,, Han Ye-Mei, Tian Yu-Xian, Wang Xiao-Yang, Zhang Hong-Zhi, Zhang Kai-Liang^‡,

Retention test under 0.1 V read bias for 10⁴ s at 85 °C for the Ta/HfO_x/BN/TiN device.