Resistive switching characteristic and uniformity of low-power HfOx-based resistive random access memory with the BN insertion layer
Su Shuai, Jian Xiao-Chuan, Wang Fang†, , Han Ye-Mei, Tian Yu-Xian, Wang Xiao-Yang, Zhang Hong-Zhi, Zhang Kai-Liang‡,
       

AFM images (1 μm × 1 μm) of BN.