Modified model of gate leakage currents in AlGaN/GaN HEMTs

Wang Yuan-Gang, Feng Zhi-Hong^†,, Lv Yuan-Jie^‡,, Tan Xin, Dun Shao-Bo, Fang Yu-Long, Cai Shu-Jun

Comparison of the results from FPE model (red dashed lines), and the modified FPE model (black solid lines) with the measured reverse I_g–V_g data for different temperatures of sample B.