Modified model of gate leakage currents in AlGaN/GaN HEMTs

Wang Yuan-Gang, Feng Zhi-Hong^†,, Lv Yuan-Jie^‡,, Tan Xin, Dun Shao-Bo, Fang Yu-Long, Cai Shu-Jun

C_t−f characteristics of (a) sample A′ and (b) sample B′.