Modified model of gate leakage currents in AlGaN/GaN HEMTs
Wang Yuan-Gang, Feng Zhi-Hong†, 
, Lv Yuan-Jie‡, , Tan Xin, Dun Shao-Bo, Fang Yu-Long, Cai Shu-Jun
, Lv Yuan-Jie‡, , Tan Xin, Dun Shao-Bo, Fang Yu-Long, Cai Shu-Jun Tracks of electrons at high reverse gate voltage.
