Modified model of gate leakage currents in AlGaN/GaN HEMTs

Wang Yuan-Gang, Feng Zhi-Hong^†,, Lv Yuan-Jie^‡,, Tan Xin, Dun Shao-Bo, Fang Yu-Long, Cai Shu-Jun

I_g–V_g characteristics of (a) sample A, (b) sample B, and ln(J_g/E_r) − characteristics of (c) sample A and (d) sample B.