Modified model of gate leakage currents in AlGaN/GaN HEMTs

Wang Yuan-Gang, Feng Zhi-Hong^†,, Lv Yuan-Jie^‡,, Tan Xin, Dun Shao-Bo, Fang Yu-Long, Cai Shu-Jun

Cross sections of AlGaN/GaN HEMTs: (a) Sample A passivated by PEALD AlN/PECVD SiN_x, (b) Sample B passivated by PECVD SiN_x.