Electronic structures and edge effects of Ga<sub>2</sub>S<sub>2</sub> nanoribbons

Electronic structures and edge effects of Ga₂S₂ nanoribbons

Wang Bao-Ji¹, Li Xiao-Hua¹, Zhang Li-Wei¹, Wang Guo-Dong¹, Ke San-Hang^{2, 3, †,}

Binding energy of bare Ga₂S₂-ZNRs (3 ≤ N_z ≤ 8) and Ga₂S₂-ANRs (6 ≤ N_a ≤ 13) as a function of the ribbon width.