Electronic structures and edge effects of Ga<sub>2</sub>S<sub>2</sub> nanoribbons

Electronic structures and edge effects of Ga₂S₂ nanoribbons

Wang Bao-Ji¹, Li Xiao-Hua¹, Zhang Li-Wei¹, Wang Guo-Dong¹, Ke San-Hang^{2, 3, †,}

Band gaps of a series of bare Ga₂S₂-ANRs (3 ≤ N_a ≤ 13) as a function of the ribbon widths (filled red lozenges). For a comparison, the result for the corresponding hydrogen saturated Ga₂S₂-ANRs is also shown (voided blue lozenges).