Electronic structures and edge effects of Ga<sub>2</sub>S<sub>2</sub> nanoribbons

Electronic structures and edge effects of Ga₂S₂ nanoribbons

Wang Bao-Ji¹, Li Xiao-Hua¹, Zhang Li-Wei¹, Wang Guo-Dong¹, Ke San-Hang^{2, 3, †,}

Band structures and corresponding LDOS for CBM and VBM of the 11-Ga₂S₂-ANR. Panels (a), (b), and (c) correspond to the bare Ga₂S₂-ANR, panels (d), (e), and (f) correspond to the H-terminated Ga₂S₂-ANRs. Each LDOS figure contains a top view (left) and a side view (right) of the LDOS isosurface of the specified states at CBM or VBM. The Fermi level is set to be zero.