Electronic structures and edge effects of Ga<sub>2</sub>S<sub>2</sub> nanoribbons

Electronic structures and edge effects of Ga₂S₂ nanoribbons

Wang Bao-Ji¹, Li Xiao-Hua¹, Zhang Li-Wei¹, Wang Guo-Dong¹, Ke San-Hang^{2, 3, †,}

Calculated spin-polarized band structures (left: majority spin; right: minority spin) and corresponding local density of states (LDOS) near the Fermi level for bare 6-Ga₂S₂-ZNR [panels (a) and (b)] and H-terminated 6-Ga₂S₂-ZNR [panels (c) and (d)].