Self-compliance multilevel storage characteristic in HfO<sub>2</sub>-based device

Self-compliance multilevel storage characteristic in HfO₂-based device

Gao Xiao-Ping¹, Fu Li-Ping², Chen Chuan-Bing³, Yuan Peng³, Li Ying-Tao^{3, †,}

LRS resistance dependence of reset current of the Ag/HfO₂/Au device. The inset shows I–V characteristic at the LRS in a double-logarithmic scale.