Self-compliance multilevel storage characteristic in HfO<sub>2</sub>-based device

Self-compliance multilevel storage characteristic in HfO₂-based device

Gao Xiao-Ping¹, Fu Li-Ping², Chen Chuan-Bing³, Yuan Peng³, Li Ying-Tao^{3, †,}

Retention characteristics of the HRS, IRS, and LRS resistances for the Ag/HfO₂/Au device under a continuous 0.1-V read voltage.