Self-compliance multilevel storage characteristic in HfO2-based device
Gao Xiao-Ping1, Fu Li-Ping2, Chen Chuan-Bing3, Yuan Peng3, Li Ying-Tao3, †,
       

Distributions of the RHRS, RIRS, and RLRS during 30 successive resistive switching cycles in the Ag/HfO2/Au device.